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BD244C - PNP Transistor

General Description

DC Current Gain -hFE =30(Min)@ IC= -0.3A Complement to Type BD243C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RAT

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isc Silicon PNP Power Transistor INCHANGE Semiconductor BD244C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Complement to Type BD243C ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6.0 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2.