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BD245 - NPN Transistor

General Description

Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD245 55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD245A BD245B 70 90 V BD245C 115 BD245 45 VCEO Collector-Emitter Voltage BD245A 60 V BD245B 80 BD245C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current Collecto