Excellent Safe Operating Area
DC Current Gain-hFE= 25(Min.)@IC = 8A
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 8A
Complement to Type BD316
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed fo
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isc Silicon NPN Power Transistor
BD315
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 8A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 8A ·Complement to Type BD316 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts
into 4 ohm load.
BD315 Datasheet
