BD312 - PNP Transistor

Inchange Semiconductor

General Description

Excellent Safe Operating Area DC Current Gain-hFE= 25(Min.)@IC = -5A Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -5A Complement to Type BD311 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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Datasheet Details

Part number	BD312
Manufacturer	Inchange Semiconductor
File Size	204.05 KB
Description	PNP Transistor
Datasheet	BD312 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BD311	NPN Transistor
BD313	NPN Transistor
BD314	Silicon PNP Power Transistor
BD315	NPN Transistor
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isc Silicon PNP Power Transistor BD312 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -5A ·Complement to Type BD311 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.