BD317 Description
·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 8A ·plement to Type BD318 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts into 8 ohm load. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor...