BD317 - NPN Transistor

Inchange Semiconductor

General Description

Excellent Safe Operating Area DC Current Gain-hFE= 25(Min.)@IC = 5A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 8A Complement to Type BD318 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

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Datasheet Details

Part number	BD317
Manufacturer	Inchange Semiconductor
File Size	201.75 KB
Description	NPN Transistor
Datasheet	BD317 Datasheet

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isc Silicon NPN Power Transistor BD317 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 8A ·Complement to Type BD318 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts into 8 ohm load.