Datasheet Details
| Part number | BD312 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.42 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BD312_SavantIC.pdf |
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Overview: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD312 www.datasheet4u.
| Part number | BD312 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.42 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BD312_SavantIC.pdf |
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·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD311 APPLICATIONS ·Designed for power amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -10 -20 -4 115 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.52 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.2A ;
IB=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A IC=-5A ;VCE=-4V VCB=rated;IE=0 VEB=-7V;
IC=0 IC=-5A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD312 | PNP Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| BD311 | SILICON POWER TRANSISTOR |
| BD317 | SILICON POWER TRANSISTOR |
| BD318 | SILICON POWER TRANSISTOR |