Datasheet Details
| Part number | BD317 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.52 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BD317_SavantIC.pdf |
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Overview: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD317 www.datasheet4u.
| Part number | BD317 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.52 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BD317_SavantIC.pdf |
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·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD318 APPLICATIONS ·Designed for high power amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 16 20 5 200 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;
IB=0 IC=8A ;IB=0.8A IC=8A ;IB=0.8A IC=8A ;VCE=2.0V VCB=100V;IE=0 VEB=7V;
IC=0 IC=5A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD317 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| BD311 | SILICON POWER TRANSISTOR |
| BD312 | SILICON POWER TRANSISTOR |
| BD318 | SILICON POWER TRANSISTOR |