BD329 Description
hFE= 85~375(Min)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 20V(Min) ·plement to type BD330 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially for battery equipped applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD329 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.