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BD329 - NPN Transistor

Description

DC Current Gain- : hFE= 85~375(Min)@ IC= 0.5A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 20V(Min) Complement to type BD330 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Especially for battery equipped applications.

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Datasheet Details

Part number BD329
Manufacturer INCHANGE
File Size 204.46 KB
Description NPN Transistor
Datasheet download datasheet BD329 Datasheet
Additional preview pages of the BD329 datasheet.

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isc Silicon NPN Power Transistor BD329 DESCRIPTION ·DC Current Gain- : hFE= 85~375(Min)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 20V(Min) ·Complement to type BD330 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially for battery equipped applications.
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