Datasheet4U Logo Datasheet4U.com

BD329 - NPN Transistor

General Description

DC Current Gain- : hFE= 85~375(Min)@ IC= 0.5A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 20V(Min) Complement to type BD330 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Especially for battery equipped applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BD329 NPN power transistor NXP
BD3201 Digital Reverb Engine BDNC
BD3201-14A Digital Reverb Engine BDNC
BD3004HFP Voltage Regulator Rohm
BD3005HFP Voltage Regulator Rohm

Other Datasheets by Inchange Semiconductor

Part Number Description
BD301 NPN Transistor
BD303 NPN Transistor
BD304 PNP Transistor
BD311 NPN Transistor
BD312 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor BD329 DESCRIPTION ·DC Current Gain- : hFE= 85~375(Min)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 20V(Min) ·Complement to type BD330 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially for battery equipped applications.