NXP Semiconductors BD329
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BD329 |
|---|---|
| Datasheet | BD329 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN power transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 3 A)● Low voltage (max. 20 V).
APPLICATIONS
● Especially for battery equipped applications.DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD330. handbook, halfpage BD329 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface baseDESCRIPTION
2 3 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tmb ≤ 45 °C IC = 0.5 A; VCE = 1 V open base CONDITIONS open emitter − − − − 85 MIN. − − − − − 130 TYP. MAX. 32 20 3 15 375 − MHz UNIT V V A W IC = 50 mA; VCE = 5 V; f = 100 MHz − 1997 Mar 07 2 Philips Semiconductors Product specification NPN power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj...
