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BD329 - NPN power transistor

General Description

NPN power transistor in a TO-126; SOT32 plastic package.

PNP complement: BD330.

Simplified outline (TO-126; SOT32) and symbol.

Key Features

  • High current (max. 3 A).
  • Low voltage (max. 20 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD329 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification NPN power transistor FEATURES • High current (max. 3 A) • Low voltage (max. 20 V). APPLICATIONS • Especially for battery equipped applications. DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD330. handbook, halfpage BD329 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol.