BD329 datasheet by NXP Semiconductors.
| Part number | BD329 |
|---|---|
| Datasheet | BD329_PhilipsSemiconductors.pdf |
| File Size | 68.50 KB |
| Manufacturer | NXP Semiconductors |
| Description | NPN power transistor |
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NPN power transistor in a TO-126; QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tmb ≤ 45 °C IC = 0.5 A; VCE = 1 V open base CONDITIONS open emitter − − − − 85 MIN.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD329 | NPN Transistor | INCHANGE |
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BD330 | PNP power transistor |
| BD331 | Silicon Darlington Power Transistors |
| BD333 | Silicon Darlington Power Transistors |
| BD335 | Silicon Darlington Power Transistors |
| BD337 | Silicon Darlington Power Transistors |
| BD338 | Silicon Darlington Power Transistors |
