Datasheet4U Logo Datasheet4U.com

BD331 - NPN Transistor

Datasheet Summary

Description

High DC Current Gain Complement to type BD332 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

circuit for audio output stages and general amplifier and switching applications.

📥 Download Datasheet

Datasheet preview – BD331

Datasheet Details

Part number BD331
Manufacturer INCHANGE
File Size 205.68 KB
Description NPN Transistor
Datasheet download datasheet BD331 Datasheet
Additional preview pages of the BD331 datasheet.

📁 Similar Datasheet

  • BD331 - Complementary Power Darlingtons (ST Microelectronics)
  • BD331 - Silicon Darlington Power Transistors (NXP)
  • BD330 - PNP power transistor (NXP)
  • BD330 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BD332 - Complementary Power Darlingtons (ST Microelectronics)
  • BD332 - SILICON DARLINGTON POWER TRANSISTOR (NXP Semiconductors)
  • BD333 - Complementary Power Darlingtons (ST Microelectronics)
  • BD333 - Silicon Darlington Power Transistors (NXP)
  • BD334 - Complementary Power Darlingtons (ST Microelectronics)
  • BD334 - SILICON DARLINGTON POWER TRANSISTOR (NXP Semiconductors)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD331 DESCRIPTION ·High DC Current Gain ·Complement to type BD332 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 60 V 60 V 6 V 6 A 0.
Published: |