BD725 Overview
hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 120V(Min) ·plement to type BD726 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD725 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...