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BD725 - NPN Transistor

General Description

DC Current Gain- : hFE= 40@ IC= 0.5A Collector-Emitter Breakdown Voltage - : V(BR)CEO= 120V(Min) Complement to type BD726 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose ampl

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isc Silicon NPN Power Transistor BD725 DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 120V(Min) ·Complement to type BD726 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications.