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BD750B Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistors.

General Description

· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- BD751B = -130V(Min)- BD751C ·High Power Dissipation ·Complement to Type BD751B/751C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD750B -110 VCEV Collector-Emitter Voltage V BD750C -140 BD750B -100 VCEO(SUS) Collector-Emitter Voltage V BD750C -130 VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -20 A IB Base Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W BD750B/750C isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD750B BD750C IC= -30mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD750B IC= -7.5A;

BD750B Distributor