Datasheet Details
| Part number | BD751B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.59 KB |
| Description | NPN Transistor |
| Datasheet | BD751B-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | BD751B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.59 KB |
| Description | NPN Transistor |
| Datasheet | BD751B-INCHANGE.pdf |
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· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C ·High Power Dissipation ·Complement to Type BD750B/750C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751B 110 VCEV Collector-Emitter Voltage V BD751C 140 BD751B 100 VCEO(SUS) Collector-Emitter Voltage V BD751C 130 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W BD751B/751C isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD751B BD751C IC=50mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage BD751B IC= 7.5A;
| Part Number | Description |
|---|---|
| BD751 | Silicon NPN Power Transistors |
| BD751A | Silicon NPN Power Transistors |
| BD751C | NPN Transistor |
| BD750 | Silicon PNP Power Transistors |
| BD750A | Silicon PNP Power Transistors |
| BD750B | PNP Transistor |
| BD750C | PNP Transistor |
| BD702 | PNP Transistor |
| BD705 | NPN Transistor |
| BD706 | PNP Transistor |