BD807 Overview
Description
DC Current Gain - : hFE = 30(Min.)@ IC= 2A - Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) - Complement to Type BD808 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | BD807 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 206.30 KB |
Pricing from 1826.03 USD, available from JRH Electronics and Newark.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| JRH Electronics | 81 | 1+ : 1826.03 USD 5+ : 1752.98 USD 10+ : 1679.94 USD 25+ : 1460.81 USD |
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| Newark | 0 | 1+ : 1332.93 USD 2+ : 1197.12 USD 4+ : 1079.2 USD 7+ : 1068.48 USD |
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Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BD80GA3VEFJ-ME2 | ROHM | LDO Regulator |
| BD80GA3MEFJ-ME2 | ROHM | LDO Regulator |
| BD80GA5MEFJ-ME2 | ROHM | LDO Regulator |
| BD80GA5VEFJ-ME2 | ROHM | LDO Regulator |
| BD809 | onsemi | Plastic High Power Silicon Transistors |