BD807 - NPN Transistor

Inchange Semiconductor

General Description

DC Current Gain - : hFE = 30(Min.)@ IC= 2A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) Complement to Type BD808 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers ut

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Datasheet Details

Part number	BD807
Manufacturer	Inchange Semiconductor
File Size	206.30 KB
Description	NPN Transistor
Datasheet	BD807 Datasheet

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Part Number	Description
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isc Silicon NPN Power Transistor BD807 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD808 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.