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BD807 page 2
Page 2

BD807 Description

hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·plement to Type BD808 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing plementary or quasi plementary circuits. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL...