BD809 - Plastic High Power Silicon Transistors

onsemi

Key Features

High DC Current Gain.
These Devices are Pb.
Free and are RoHS Compliant.

BD809 plastic high power silicon transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	BD809
Manufacturer	onsemi
File Size	89.20 KB
Description	Plastic High Power Silicon Transistors
Datasheet	BD809 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB PD 80 80 5.0 10 6.0 90 0.72 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.