BD809 Datasheet and Specifications PDF

·DC Current Gain - : hFE =30@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type BD810 ·Minimum Lot-to-Lot variations for robust device performance and reliable op.

herwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 2V ICBO Collector Cutoff Current VCB= 80V;IE= 0 IEBO Emitter Cutoff Cu.

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • H.

* High DC Current Gain
* These Devices are Pb
*Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector
*Emitter Voltage Collector
*Base Voltage Emitter
*Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB .