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BD829 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High DC Current Gain Low Saturation Voltage Complement to Type BD828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD829 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD828 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.