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BD829 - NPN power transistors

General Description

NPN power transistor in a TO-202; SOT128B plastic package.

PNP complements: BD826 and BD830.

Key Features

  • High current (max. 1 A).
  • Low voltage (max. 80 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose • Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION NPN power transistor in a TO-202; SOT128B plastic package. PNP complements: BD826 and BD830. handbook, halfpage BD825; BD829 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 1 1 2 3 MAM305 Fig.1 Simplified outline (TO-202; SOT128B) and symbol.