BD844 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) - High DC Current Gain - Low Saturation Voltage - Complement to Type BD843 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for driver-stages in hi-fi amplifiers and television circuits. SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 2 W 10 150 ℃ Tstg Storage Temperature Range SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c 12.5 ℃/W Rth j-a isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD844 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 1A; IB= -100mA VBE(on) Base-Emitter On Voltage IC= -1.0A ; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 VCB=-30V; IE= 0; TC= 125℃ IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -5mA ; VCE= -2V hFE-2 DC Current Gain IC= -150mA ; VCE= -2V hFE-3 DC Current Gain IC= -1A ; VCE=- 2V fT Current-Gain-Bandwidth Product IC= -50mA ; VCE=- 5V MIN TYP.
