BD841 Description
·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD841 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;.