BD841 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) - High DC Current Gain - Low Saturation Voltage - Complement to Type BD842 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | BD841 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 207.52 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BD841 | NXP Semiconductors | Silicon Planar Epitaxial Power Transistor |
| BD845CS | PanJit Semiconductor | DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| BD845YS | PanJit Semiconductor | DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| BD8200CS | PanJit Semiconductor | DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| BD845S | PanJit Semiconductor | DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |