Part Number	BD841 Datasheet
Manufacturer	Inchange Semiconductor
Overview	·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD842 ·Minimum Lot-to-Lot variations for robust device performance and reli. i is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD841 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;.