BD910
BD910 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- DC Current Gain
- : h FE = 40@ IC= -0.5A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80V(Min)
- plement to Type BD909
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-80
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-15
Collector Current-Peak
-20
Base Current
-5
Collector Power Dissipation @ TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A A W ℃...
