BD910 Datasheet | STMicroelectronics

DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The plementary PNP types are BD910 and BD912 respectively. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO VEBO I E ,IC IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current T otal Dissipation at Tc ≤ 25 C Storage Temperature o Value BD909 BD910 80 80 5 15 5 90 -65 to 150 150 BD911 BD912 100 100 Un it V V V A A W o o Max. Operating Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BD909 / BD910 / BD911 / BD912 THERMAL DATA R thj -case Thermal Resistance Junction-case Max 1.4 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 o C for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB = 5 V I C = 100 m A for BD909/910 for BD911/912 I B = 0.5 A IB = 2.5 A IB = 2.5 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V 40 15 5 3 80 100 1 3 2.5 1.5 250 150 MHz V CB = 80 V V CB = 100 V V CB = 80 V V CB = 100 V V CE = 40 V V CE = 50 V Min. T yp. Max. 500 500 5 5 1 1 1 Unit µA µA m A m A m A m A m A V V V V V V I CEO IEBO Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) V CEO(s us) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ V BE ∗ h F E∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain IC = 5 A I C = 10 A I C = 10 A IC = 5 A I C = 0.5 A IC = 5 A I C = 10 A I C = 0.5 A f T Transition frequency ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating...