Inchange Semiconductor BDS19
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDS19 |
|---|---|
| Datasheet | BDS19 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage: VCEV= -150V(Min)●Low Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -4A
●High Reliablity
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for power linear and switching application and General puepose power.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -150 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current -2 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sus...