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BDT61CF - NPN Transistor

Datasheet Summary

Description

High DC Current Gain Low Saturation Voltage Complement to Type BDT60CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

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Datasheet Details

Part number BDT61CF
Manufacturer INCHANGE
File Size 209.04 KB
Description NPN Transistor
Datasheet download datasheet BDT61CF Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61CF DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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