Download BDT61 Datasheet PDF
Inchange Semiconductor
BDT61
BDT61 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - DC Current Gain -h FE = 750(Min)@ IC= 1.5A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C - plement to Type BDT60/A/B/C - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage BDT61A BDT61B BDT61C VCEO Collector-Emitter Voltage BDT61A BDT61B BDT61C VEBO Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ Tj...