Inchange Semiconductor BDT61
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDT61 |
|---|---|
| Datasheet | BDT61 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain -hFE = 750(Min)@ IC= 1.5A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C
●Complement to Type BDT60/A/B/C
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT61 60 VCBO Collector-Base Voltage BDT61A 80 V BDT61B 100 BDT61C 120 BDT61 60 VCEO Collector-Emitter Voltage BDT61A 80 V BDT61B 100 BDT61C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Tj Junction Temperature 0.1 A 2 W 50 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-c Thermal Resistance,Junction to Ambi...