BDT61 Datasheet
BDT61 Datasheet (Bourns)
Bourns
BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C 50 W at 25°C Case Temperature 4 A Contin.
50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 60 80 100 120 60 80 100 120 5 4 0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifi.
BDT61 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C .
ERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-c Thermal Resistance,Junction to Ambient isc website： MAX UNIT 2.5 ℃/W 62.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistors BDT61/A/B/C ELECTRICAL CHARACTERIST.