• Part: BDT61C
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Bourns
  • Size: 240.21 KB
Download BDT61C Datasheet PDF
Bourns
BDT61C
BDT61C is NPN Transistor manufactured by Bourns.
- Part of the BDT61 comparator family.
.. BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS - Designed for plementary Use with BDT60, BDT60A, BDT60B and BDT60C - 50 W at 25°C Case Temperature - 4 A Continuous Collector Current - Minimum h FE of 750 at 1.5V, 3 A TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range BDT61 BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 m W/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE 60 80 100 120 60 80 100 120 5 4 0.1 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V A A W W °C °C °C PRODUCT INFORMATION AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. Data Sheet4 U . .. BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX BDT61 Collector-emitter V(BR)CEO breakdown voltage IC = 30 m...