BDT61C
BDT61C is NPN Transistor manufactured by Bourns.
- Part of the BDT61 comparator family.
- Part of the BDT61 comparator family.
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BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
- Designed for plementary Use with BDT60, BDT60A, BDT60B and BDT60C
- 50 W at 25°C Case Temperature
- 4 A Continuous Collector Current
- Minimum h FE of 750 at 1.5V, 3 A
TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range
BDT61 BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 m W/°C.
SYMBOL
VCBO
VCEO
VEBO IC IB Ptot Ptot Tj Tstg TA
VALUE
60 80 100 120 60 80 100 120 5 4 0.1 50 2 -65 to +150 -65 to +150 -65 to +150
UNIT
V A A W W °C °C °C
PRODUCT INFORMATION
AUGUST 1993
- REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
Data Sheet4 U .
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BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDT61
Collector-emitter V(BR)CEO breakdown voltage
IC = 30 m...