BDT61
BDT61 is NPN Transistor manufactured by Bourns.
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BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
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Designed for plementary Use with BDT60, BDT60A, BDT60B and BDT60C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum h FE of 750 at 1.5 V, 3 A
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BDT61 Collector-base voltage (IE = 0) BDT61A BDT61B BDT61C BDT61 Collector-emitter voltage (IB = 0) BDT61A BDT61B BDT61C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 m W/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 60 80 100 120 60 80 100 120 5 4 0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
PRODUCT
Data Sheet 4 U .
INFORMATION
AUGUST 1993
- REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDT61 V(BR)CEO IC = 30 m A IB = 0 (see Note 3) BDT61A BDT61B BDT61C VCE = 30 V ICEO Collector-emitter cut-off current VCE = 40 V VCE = 50 V VCE = 60 V VCB = 60 V VCB = 80 V VCB = 100 V ICBO Collector cut-off current VCB = 120 V VCB = 30 V VCB = 40 V VCB = 50 V VCB = 60 V IEBO h FE VCE(sat) VBE(on) VEC Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VEB = VCE = IB = VCE = IE =...
