Collector Current -IC= 12A
High DC Current Gain-hFE= 1000(Min)@ IC= 5A
Complement to Type BDT64/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio output stages and general purpose
amplifier applications
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT65
60
VCER
Collector-Emitter Voltage
BDT65A
80
BDT65B
100
V
BDT65C
120
BDT65
60
VCEO
Collector-Emitter Voltage
BDT65A
80
BDT65B
100
V
BDT65C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
BDT65 Datasheet
