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BDT65B - NPN Transistor

This page provides the datasheet information for the BDT65B, a member of the BDT65 NPN Transistor family.

Datasheet Summary

Description

Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications

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Datasheet preview – BDT65B

Datasheet Details

Part number BDT65B
Manufacturer INCHANGE
File Size 211.67 KB
Description NPN Transistor
Datasheet download datasheet BDT65B Datasheet
Additional preview pages of the BDT65B datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT65 60 VCER Collector-Emitter Voltage BDT65A 80 BDT65B 100 V BDT65C 120 BDT65 60 VCEO Collector-Emitter Voltage BDT65A 80 BDT65B 100 V BDT65C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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