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BDW23 - NPN Transistor

General Description

Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min)@ IC= 2A Complement to Type BDW24/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM R

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW23 45 BDW23A 60 VCER Collector-Emitter Voltage V BDW23B 80 BDW23C 100 BDW23 45 BDW23A 60 VCEO Collector-Emitter Voltage V BDW23B 80 BDW23C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.