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BDW24 - PNP Transistor

General Description

Collector Current -IC= -6A High DC Current Gain-hFE= 750(Min)@ IC= -2A Complement to Type BDW23/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min)@ IC= -2A ·Complement to Type BDW23/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW24 -45 BDW24A -60 VCER Collector-Emitter Voltage V BDW24B -80 BDW24C -100 BDW24 -45 BDW24A -60 VCEO Collector-Emitter Voltage V BDW24B -80 BDW24C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.