Datasheet4U Logo Datasheet4U.com

BDW41 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 5A Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A Complement to Type BDW46 Minimum Lot-to-Lot variations for robust device performa

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BDW41 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
BDW40 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
BDW42 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ON Semiconductor
BDW42 SILICON POWER TRANSISTOR SavantIC
BDW42 (BDW39 - BDW48) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Motorola

Other Datasheets by Inchange Semiconductor

Part Number Description
BDW40 NPN Transistor
BDW42 NPN Transistor
BDW43 NPN Transistor
BDW44 PNP Transistor
BDW45 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A ·Complement to Type BDW46 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.