Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
- High DC Current Gain
: hFE= 1000(Min) @IC= 5A
- Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A
- plement to Type BDW48
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose and low speed switching...
