Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
High DC Current Gain
: hFE= 1000(Min) @IC= 5A
Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A
Complement to Type BDW48
Minimum Lot-to-Lot variations for robust device
perform
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A
·Complement to Type BDW48 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
BDW43 Datasheet
