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BDW45 - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) High DC Current Gain : hFE= 1000(Min) @IC= -5A Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A Complement to Type BDW40 Minimum Lot-to-Lot variations for robust device pe

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isc Silicon PNP Darlington Power Transistor BDW45 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A ·Complement to Type BDW40 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.