Datasheet Details
| Part number | BDX60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.35 KB |
| Description | NPN Transistor |
| Datasheet | BDX60-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDX60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.35 KB |
| Description | NPN Transistor |
| Datasheet | BDX60-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V (Min) ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range 100 V 70 V 7 V 15 A 20 A 5 A 150 W 150 ℃ -65~150 ℃ BDX60 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDX60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC=5A;
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