Datasheet Details
| Part number | BDX65C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.45 KB |
| Description | NPN Transistor |
| Datasheet | BDX65C BDX65 Datasheet (PDF) |
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Overview: isc Silicon NPN Darlington Power Transistor.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BDX65C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.45 KB |
| Description | NPN Transistor |
| Datasheet | BDX65C BDX65 Datasheet (PDF) |
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·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDX64/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX65 80 VCBO Collector-Base Voltage BDX65A 100 V BDX65B 120 BDX65C 140 BDX65 60 VCEO Collector-Emitter Voltage BDX65A 80 BDX65B 100 V BDX65C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 117 W 200 ℃ Tstg Storage Temperature Range -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.5 ℃/W BDX65/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX65/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX65 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX65A BDX65B BDX65C VCE(sat) Collector-Emitter Saturation Voltage VBE(on) VECF Base-Emitter On Voltage C-E Diode Forward Voltage ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 hFE-2 DC Current Gain DC Current Gain hFE-3 DC Current Gain fT Current-Gain—Bandwidth Product Switching times ton Turn-on Time toff Turn-off Time CONDITIONS IC= 50mA ;IB=0 IC= 5A;
IB= 20mA IC= 5A ;
VCE= 3V IF= 5A VCE= 1/2VCEOmax;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDX65C | SILICON POWER TRANSISTOR | SavantIC |
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BDX65C | Bipolar NPN Device | Seme LAB |
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BDX65C | NPN SILICON DARLINGTONS POWER TRANSISTOR | Comset Semiconductors |
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BDX65 | Bipolar NPN Device | Seme LAB |
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BDX65 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BDX65 | NPN Transistor |
| BDX65A | NPN Transistor |
| BDX65B | NPN Transistor |
| BDX60 | NPN Transistor |
| BDX61 | NPN Transistor |
| BDX66 | PNP Transistor |
| BDX66A | PNP Transistor |
| BDX66B | PNP Transistor |
| BDX66C | PNP Transistor |
| BDX67 | NPN Transistor |