| Part number | BDY60 |
|---|---|
| Datasheet | BDY60-INCHANGE.pdf |
| File Size | 197.08 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDY60 | Bipolar NPN Device | Seme LAB |
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