Datasheet Details
| Part number | BDY73 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.57 KB |
| Description | NPN Transistor |
| Datasheet | BDY73-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDY73 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.57 KB |
| Description | NPN Transistor |
| Datasheet | BDY73-INCHANGE.pdf |
|
|
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·Excellent Safe Operating Area ·DC Current Gain-hFE=50-150@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.5 ℃/W BDY73 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY73 | Bipolar NPN Device | Seme LAB |
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|---|---|
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