Datasheet Details
| Part number | BDY76 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.12 KB |
| Description | NPN Transistor |
| Datasheet | BDY76-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDY76 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.12 KB |
| Description | NPN Transistor |
| Datasheet | BDY76-INCHANGE.pdf |
|
|
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·Excellent Safe Operating Area ·High DC Current Gain- : hFE= 40~120@IC = 10A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEX Collector-Emitter Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 5 A PC Collector @TC=25℃ Power Dissipation 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W BDY76 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
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