BDY76
Overview
Excellent Safe Operating Area High DC Current Gain- : hFE= 40~120@IC = 10A Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | BDY76 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 204.12 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BDY72 | Seme LAB | Bipolar NPN Device |
| BDY73 | Seme LAB | Bipolar NPN Device |
| BDY71X | Seme LAB | Bipolar NPN Device |
| BDY77 | Semelab | Bipolar NPN Device |
| BDY78 | Seme LAB | Bipolar NPN Device |