Datasheet Details
| Part number | BDY90A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.71 KB |
| Description | NPN Transistor |
| Datasheet | BDY90A-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | BDY90A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.71 KB |
| Description | NPN Transistor |
| Datasheet | BDY90A-INCHANGE.pdf |
|
|
|
·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W BDY90A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY90A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BDY90 | HIGH CURRENT NPN SILICON TRANSISTOR | STMicroelectronics |
 |
BDY90 | NPN SILICON TRANSISTOR | Seme LAB |
| Part Number | Description |
|---|---|
| BDY90 | NPN Transistor |
| BDY91 | NPN Transistor |
| BDY92 | NPN Transistor |
| BDY93 | NPN Transistor |
| BDY94 | NPN Transistor |
| BDY95 | NPN Transistor |
| BDY96 | NPN Transistor |
| BDY97 | NPN Transistor |
| BDY98 | NPN Transistor |
| BDY99 | NPN Transistor |