Datasheet Details
| Part number | BF470 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.86 KB |
| Description | PNP Transistor |
| Datasheet | BF470-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product.
| Part number | BF470 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.86 KB |
| Description | PNP Transistor |
| Datasheet | BF470-INCHANGE.pdf |
|
|
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·PNP transistors in a to-126 package ·NPN plements BF469 and BF471 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for class-B video output stages in television Receivers and for high-voltage IF output stages ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BF469 -250 VCBO Collector-Base Voltage V BF471 -300 BF469 -250 VCEO Collector-Emitter Voltage V BF471 -300 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 mA ICM Collector Current-Peak -100 mA IBM Base Current-Peak Ptot Total power dissipation Tmp≤114℃ TJ Junction Temperature -50 mA 1.8 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance, Junction to ambient 100 K/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BF470/BF472 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -30mA;
IB= 5mA IEBO Emitter Cutoff Current IcBO Collector cut-off current hFE DC Current Gain VEB= -5V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BF470 | PNP high-voltage transistors | NXP |
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BF470 | PNP SILICON PLANAR TRANSISTORS | Siemens Semiconductor Group |
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BF470 | Silicon PNP Transistor | Toshiba |
| Part Number | Description |
|---|---|
| BF471 | NPN Transistor |
| BF472 | PNP Transistor |
| BF457 | NPN Transistor |
| BF458 | NPN Transistor |
| BF459 | NPN Transistor |
| BF469 | NPN Transistor |