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BF472 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·PNP transistors in a to-126 package ·NPN plements BF469 and BF471 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for class-B video output stages in television Receivers and for high-voltage IF output stages ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BF469 -250 VCBO Collector-Base Voltage V BF471 -300 BF469 -250 VCEO Collector-Emitter Voltage V BF471 -300 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 mA ICM Collector Current-Peak -100 mA IBM Base Current-Peak Ptot Total power dissipation Tmp≤114℃ TJ Junction Temperature -50 mA 1.8 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance, Junction to ambient 100 K/W isc website:.iscsemi.

1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BF470/BF472 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -30mA;

IB= 5mA IEBO Emitter Cutoff Current IcBO Collector cut-off current hFE DC Current Gain VEB= -5V;

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