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isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain
︱S21e︱2 = 13dB TYP. @VCE= 8 V,IC = 10mA,f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in TV-sat and UHF tuners.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage
20
V
20
V
15
V
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2.5
V
30
mA
4
mA
0.28
W
150
℃
-65~150
℃
BF775
isc website:www.iscsemi.