| Part Number | BF775 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | NPN Silicon RF Transistor • Especially suitable for TV-Sat and UHF tuners • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF775 32 1 ESD (Electrostatic discharge) sensitive devic. . |
BF775 Datasheet and Specifications PDF
The BF775 is a NPN Silicon RF Transistor.
| Part Number | BF775 Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BF 775 NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configurati. 15 100 - V µA 10 nA 100 µA 100 40 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-. |
| Part Number | BF775 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Noise Figure
NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain
︱S21e︱2 = 13dB TYP. @VCE= 8 V,IC = 10mA,f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de.
lector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
15
V
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
10 μA
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 2.5V; IC= 0
0.1 μA
hFE
DC Current Gain
IC= 10mA ; VCE= 8V
40
200
fT
Current-Gain *Bandw. |