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BFP420W - NPN Transistor

General Description

High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in RF wideband amplifiers and oscillators.

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isc Silicon NPN RF Transistor DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range 15 V 4.5 V 1.5 V 35 mA 3 mA 160 mW 150 ℃ -65~150 ℃ BFP420W isc website：www.iscsemi.