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BFP420 - Surface mount wideband silicon NPN RF bipolar transistor

General Description

of Infineon’s established fourth generation RF bipolar transistor family.

gain and low current characteristics 10 GHz.

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Datasheet Details

Part number BFP420
Manufacturer Infineon
File Size 290.85 KB
Description Surface mount wideband silicon NPN RF bipolar transistor
Datasheet download datasheet BFP420 Datasheet

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BFP420 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP420 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition fsrueiqtaubelnecfyorfToosfc2il5laGtoHrzs,uhpigtho gain and low current characteristics 10 GHz. It remains cost competitive make the device without compromising on ease of use. Feature list • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 2 V, 5 mA • High gain Gms = 21 dB at 1.8 GHz, 2 V, 20 mA • OIP3 = 22 dBm at 1.8 GHz, 2 V, 20 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020.