BFP420 Datasheet | Infineon

Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP420 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition fsrueiqtaubelnecfyorfToosfc2il5laGtoHrzs,uhpigtho gain and low current characteristics 10 GHz. It remains cost petitive make the device without promising on ease of use. Feature list - Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 2 V, 5 mA - High gain Gms = 21 dB at 1.8 GHz, 2 V, 20 mA - OIP3 = 22 dBm at 1.8 GHz, 2 V, 20 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC...