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BFP420
Surface mount wideband silicon NPN RF bipolar transistor
Product description
The BFP420 is a low noise device based on a grounded emitter (SIEGET™) that is part
of Infineon’s established fourth generation RF bipolar transistor family. Its transition
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gain and low current characteristics 10 GHz. It remains cost competitive
make the device without compromising
on ease of use.
Feature list
• Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 2 V, 5 mA • High gain Gms = 21 dB at 1.8 GHz, 2 V, 20 mA • OIP3 = 22 dBm at 1.8 GHz, 2 V, 20 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020.