| Part Number | BFP420 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
The BFP420 is a low noise device based on a grounded emitter (SIEGET™) that is part
of Infineon’s established fourth generation RF bipolar transistor family. Its transition
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* Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 2 V, 5 mA * High gain Gms = 21 dB at 1.8 GHz, 2 V, 20 mA * OIP3 = 22 dBm at 1.8 GHz, 2 V, 20 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified for indust. |
BFP420 Datasheet and Specifications PDF
The BFP420 is a Surface mount wideband silicon NPN RF bipolar transistor.
Key Specifications
| Package | SOT-343 |
|---|---|
| Mount Type | Surface Mount |
| Height | 1.1 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BFP420 Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview |
SIEGET® 25
NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency.
causes an additional reverse biased diode between emitter and collector, which does not effect normal operation.
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Transistor Schematic Diagram
The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipate. |