Inchange Semiconductor BT169D
Thyristors
FEATURES
●With TO-92 package●Sensitive gate trigger current
●Low reverse and forward blocking current
●Low holding current
●For general purpose switching and phase control applications.
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(AV) Average on-state current IT(RMS) RMS on-state current PGM Peak gate power PG(AV) Average gate power ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature MIN 400 400 0.5 0.8 2 0.1 8 125 -40~+ 150 UNIT V V A A W W A ℃ ℃ELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDRM Repetitive peak off-state voltage ID=0.1mA VRRM Repetitive peak reverse voltage ID=0.5mA IRRM Repetitive peak reverse current VRRM=400V IDRM Repetitive peak off-state current VDRM=400V IGT Gate trigger current VD= 12V; IT= 10mA VTM...